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MSA-0520
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
The MSA-0520 is a high performance silicon bipolar MonolithicMicrowaveIntegratedCircuit(MMIC)housed in a hermetic, BeO disk package for good thermal characteristics.ThisMMICisdesignedforuseasageneral purpose 50 gain block. Typical applications include narrowandbroadbandIFandRFamplifiersinindustrial andmilitaryapplications.
Features
* Cascadable50GainBlock * HighOutputPower: +23dBmTypicalP1dBat1.0GHz * LowDistortion: 33dBmTypicalIP3at1.0GHz * 8.5dBTypicalGainat1.0GHz
The MSA-series is fabricated using Avago's 10 GHz * HermeticMetal/BerylliaMicrostripPackage fT, 25GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, u niformity and reliability. The use of an external bias resistorfortemperatureandcurrentstabilityalsoallows biasflexibility.
200 mil BeO Package
Typical Biasing Configuration
R bias VCC > 15 V
RFC (Optional) C block IN 1 4 3
MSA
C block OUT Vd = 12 V
2
MSA-0520 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[,3] RF Input Power Junction Temperature Storage Temperature
Absolute Maximum[1] 5 mA 3.0 W +5 dBm 00C -65 to 00C
Thermal Resistance[2,4]: jc = 5C/W
Notes: 1. Permanentdamagemayoccurifanyoftheselimitsareexceeded. 2. TCASE=25C. 3. Derateat40mW/CforTC>125C. 4. Thesmallspotsizeofthistechniqueresultsinahigher,thoughmoreaccuratedetermination ofjcthandoalternatemethods.
Electrical Specifications[1], TA = 25C
Symbol
P1 dB GP GP f3 dB VSWR IP3 NF50 tD Vd dV/dT
Parameters and Test Conditions: Id = 165 mA, ZO = 50
Output Power at 1 dB Gain Compression Power Gain (|S1| ) Gain Flatness 3 dB Bandwidth[] Input VSWR Output VSWR Third Order Intercept Point 50 Noise Figure Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to .0 GHz f = 0.1 to .0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to .0 GHz
Units
dBm dB dB GHz
Min.
1.0 7.5
Typ.
3.0 8.5 0.75 .8 .0:1 .5:1
Max.
9.5
dBm dB psec V mV/C 10.5
33.0 6.5 170 1.0 -16.0 13.5
Notes: 1. Therecommendedoperatingcurrentrangeforthisdeviceis80to200mA. Typicalperformanceasafunctionofcurrentisonthefollowingpage. 2. Referencedfrom0.1GHzGain(GP).
MSA-0520 Typical Scattering Parameters (TA = 25C, Id = 165 mA)
Freq. MHz 5 5 50 100 00 400 600 800 1000 1500 000 500 3000 3500 4000 Mag .57 .5 .15 .11 .10 .10 .11 .13 .15 . .30 .37 .41 .45 .46 S11 Ang -38 -90 -111 -138 -15 -15 -147 -14 -140 -14 -156 -170 170 149 14 dB 14.4 10.7 9.5 8.9 8.8 8.7 8.6 8.5 8.4 8.0 7.4 6.7 5.6 4.5 3.3 S21 Mag 5.5 3.4 .97 .80 .75 .7 .70 .67 .64 .5 .36 .16 1.91 1.68 1.45 Ang 165 160 163 166 163 15 140 18 115 85 55 33 8 -16 -40 dB -19.4 -14.9 -14.4 -14. -14.1 -14.1 -14.0 -14.1 -14.1 -13.7 -13.3 -1.9 -1.7 -1.1 -11.7 S12 Mag .107 .180 .190 .195 .197 .198 .199 .199 .198 .06 .16 .7 .3 .49 .59 Ang 38 17 9 3 1 - -4 -6 -8 -1 -16 -18 -3 -31 -39 Mag .67 .9 .18 .11 .10 .14 .18 . .7 .34 .43 .48 .51 .55 .56 S22 Ang -35 -81 -97 -113 -15 -13 -13 -17 -131 -143 -158 -166 -177 173 16 k 0.57 0.93 1.10 1.16 1.17 1.16 1.14 1.1 1.09 0.98 0.85 0.75 0.70 0.63 0.66
Typical Performance, TA = 25C
(unless otherwise noted)
10 200 TC = +100C TC = +25C TC = -50C 36
0.1 GHz
150
GAIN (dB)
IP3 (dBm)
8
32
IP3
Id (mA)
6
0.5 GHz 1.0 GHz 2.0 GHz 1.5 GHz
28
100 24 50 P1 dB (dBm) P1 dB
4
2
20
0 14
16
18
20
22
24
26
28
30
0
0
3
6
9 Vd (V)
12
15
16 80
120
160 Id (mA)
200
POWER OUT (dBm)
Figure 1. Typical Gain vs. Power Out, TA = 25C, Id = 165 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Current, f = 1.0 GHz.
28 26 P1 dB (dBm) 24 22 20 18 16 -50 2.0 GHz 0.5 GHz Gp (dB)
10
4
8
3 Output VSWR
6
1.0 GHz
2
4 Id = 200 mA Id = 165 mA Id = 80 mA
2
1
Input
+25
+100
0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
CASE TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY, (GHz)
Figure 4. Output Power @ 1 dB Gain Compression vs. Temperature, Id = 165 mA.
Figure 5. Gain vs. Frequency.
Figure 6. VSWR vs. Frequency, Id = 165 mA.
3
Ordering Information
Part Numbers MSA-050 No. of Devices 100 Comments Bulk
200 mil BeO Package Dimensions
4 .300 .025 7.62 .64 45 1 RF INPUT NO REFERENCE GROUND .060 1.52 .048 .010 1.21 .25 2 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 3. Base of package is electrically isolated. .004 .002 .10 .05 GROUND .030 .76
.128 3.25
.205 5.21
.023 .57
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-755EN AV0-18EN May 14, 008

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